发明名称 FORMING METHOD FOR THIN-FILM WIRING
摘要 PURPOSE:To provide a method for forming a thin-film wiring having high yield of a board by reliably and efficiently inspecting and correcting a defect during the thin-film wiring forming step. CONSTITUTION:A method for forming a thin-film wiring comprises the steps of d1 covering the surface of a metal thin film A with other metal thin film B, d2 forming a resist pattern on the film A, d3 exposing the film A by selectively etching only the film B of the other film B, d4 filling plating metal in the exposed part of the film A based on a resist pattern, and d5 separating the resist. Accordingly, the steps of inspecting to recognize the defect by detecting a pattern image and correcting the defect is added between the steps d3 and d4.
申请公布号 JPH07336024(A) 申请公布日期 1995.12.22
申请号 JP19940125163 申请日期 1994.06.07
申请人 HITACHI LTD 发明人 SHISHIDO CHIE;KOSHISHIBA HIROYA;SAKAMOTO HARUHISA
分类号 H05K3/06;G01N21/88;G01N21/956;H05K3/00;H05K3/08;H05K3/18;H05K3/24;H05K3/46;(IPC1-7):H05K3/24 主分类号 H05K3/06
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