| 摘要 |
PURPOSE:To provide a semiconductor device wherein the decrease of a field oxide film can be prevented when acid treatment like delute HF treatment is performed, the decrease of reversed voltage of a field and the generation of irregularity are excluded, and the decrease of yield can be prevented while ensuring high reliability, and the manufacturing method of the device. CONSTITUTION:For the gate electrode of an MOS transistor to be formed on a semiconductor substrate 2, either one or both of a first layer conducting film 8 (poly silicon film) and a second layer conducting film (poly silicon film) are used in this manufacturing method of a semiconductor device. Channel ion implantation 15 for controlling the threshold value of the MOS transistor is performed by applying the first layer conducting film (poly silicon film) to a buffering film. Since the first layer conducting film to be used for the gate electrode is applied to the buffering film, the number of times of dilute HF treatment for peeling a dummy gate oxide film can be reduced. As the result, the decrease of a field oxide film is prevented. |
