| 摘要 |
<p>PURPOSE:To make a high density emission current securable with low voltage by arranging a corpuscle dispersively in or on a semiconductor layer formed between electrodes being opposed. CONSTITUTION:Electrodes 2 and 3 consisting of a low resistor for voltage impression are installed on a substrate 1 at a minute interval, and a corpuscle 5 is dispersed in a semiconductor layer 6 formed in an electrode spacing part 4 whereby a discontinuous electron emission part 4 is formed. A drawer electrode for drawing out an electron emitted is installed on a top surface of the electron emission part 4 at some interval. Voltage is impressed on an interval between these electrodes 2, 3 in a vacuum whereby an electric current flows between these electrodes, and when the drawer electrode is set to the + side and voltage is impressed on it, it emits the electron in the vertical direction to almost the paper surface from the electron emission part 4. Thus, a high density emission current is securable with low power.</p> |
