摘要 |
The surface treatment of carbon-containing material (1) is characterised in that a layer of SiC (2) is formed on the carbon-containing material (1) by thermochemical conversion of the carbon-containing material (1) using an Si precursor (4) at a temperature higher than the temperature of formation, from the said precursor, of a reactive gaseous intermediate (generally SiO), so as to obtain a surface layer (2) permitting a deposition of adherent diamond. Articles coated, at least locally, with "SiC/diamond". <IMAGE> |