| 摘要 |
PURPOSE:To obtain a photoresist compsn. capable of forming a resist pattern excellent in adhesion to substrate with a silicon oxide film, a silicon nitride film, etc., not causing defective etching due to sublimate, less liable to change in sensitivity with the lapse of time or change in the rate of a residual film with the lapse of time and useful for the production of semiconductor device, TFT, etc. CONSTITUTION:This photoresist compsn. contains an alkali-soluble resin, a compd. having a quinonediazido group and at least one kind of nitrogen-contg. heterocyclic compd. represented by the formula [where X is -O-or -CHR<6>-, each of R<1>-R<6> is H a lower alkyl or lower hydroxyalkyl and n is 0 or 1]. The pref. content of the heterocyclic compd. is 0.1-10wt.% of the total amt. of the solid components in this compsn. |
