| 摘要 |
PURPOSE:To remove bubbles of hydrogen gas or the like attached to the surface of a work so as to enable the work to the work to be subjected to a plating process of high accuracy without producing defectives by a method wherein a jet of treating liquid is stopped so as not to come into contact with the treating surface of a wafer when a plating device is in a normal operation. CONSTITUTION:A treating device A is composed of a processing tank 1, a lower electrode (anode) 2, an upper electrode (cathode) 3, a protective pad 4 which stops the upper electrode 3 from coming into contact with treating liquid S, an outer case 5, and a circulating pump 6. A semiconductor wafer W is held above the treating tank 1 by the cathode pin 7 of the upper electrode 3 making its treating surface face downwards, and an electric current is made to flow between the electrodes 2 and 3 while treating liquid is jetted to enable the wafer W to be subjected to plating or forming. The circulating pump 6 is stopped so as not to bring treating liquid into contact with the wafer W, and bubbles attached to the treating surface of the wafer W are removed. By this setup, a plating failure caused by bubbles is prevented, and a plating treatment of high accuracy can be realized. |
