| 摘要 |
PURPOSE:To prevent erroneous operation and realize large-scale integration, by dividing a drain region in response to the number of gates on the drain side. CONSTITUTION:Bismuth titanate as a ferroelectric film 14 is formed directly on a p-type silicon substrate 1, and gate electrodes 7, 8, 9 and 10 divided into four are formed on it. A source 13 of an n-type semiconductor layer of high density is formed in a surface layer of the silicon substrate 1 on the side of the gate electrodes 7, 9. Drains 11, 12 of the n-type semiconductor layer of high density corresponding to the gate electrodes 9, 10 are formed in the surface layer of the silicon substrate 1 on the side of the gate electrodes 8, 10. To control the amount of free electron beams f,lowing out from the source 13 by a ferroelectric element, the gate electrodes 7, 8, 9 and 10 are provided with a ferroelectric film 14 between the source 13 and the gate electrodes. Free electrons flowing through a channel 17 in the silicon substrate 1 near the ferroelectric film 14 flow out from the drains 11, 12, and are partly applied to the gate electrodes 8, 10. |
