| 摘要 |
PURPOSE:To reduce the conductor loss and surface resistance of a high frequency electrode and to make application equipment using the electrode into miniaturization and light weight by forming the film thickness of a conductor within a prescribed range. CONSTITUTION:A part of an incident electromagnetic wave advances in the inside of the high frequency electrode, and the other is reflected on the surface of the high frequency electrode. The electromagnetic wave advancing in the inside is reflected on the back plane of the high frequency electrode, and a part of it transmits the back plane. The film thickness of the high frequency electrode is formed in the one in a range of 1.14-2.75 times, desirably 1.32 to 1.92 times, and most desirably pi/2 times the facing depth of a working frequency, therefore, the electromagnetic waves on the surface and back plane of the high frequency electrode strengthen the opponent mutually, which increases a reflection coefficient. At this time, the facing effect of current density in the inside of the high frequency electrode can be relaxed by a current excited by the electromagnetic wave reflected on the back plane of the high frequency electrode compared with the one in the case that the film thickness of the electrode is sufficiently large. |
