| 摘要 |
<p>PURPOSE:To provide a photomask being a halftone phase shift mask on which plural fine openings or formed with fine openings having two-dimensional periods are formed and which is capable of suppressing the sub-peaks generated in non-exposed parts without lowering the transmittance of translucent phase shift films. CONSTITUTION:The photomask in which the fine openings 3 having the two-dimensional periods are formed on the translucent phase shift film 2 formed on a transparent substrate 1, is so constituted that the pitch in one direction of the fine openings 3 is made to be 2.5lambda/NA on an imaging plane and the pitch in a direction orthogonal therewith is made to be 2.5lambda/NA or 1.48lambda/NA (wherein lambda is a wavelength [mum[ of exposing light and NA is the numerical aperture of an exposure device).</p> |
