发明名称 |
Integrated circuit electromigration monitor |
摘要 |
The electromigration characteristics of integrated circuit conductors are determined by passing a high current for a short period of time through an inventive test structure. This provides a rapid test in a more accurate manner than with the prior art SWEAT (Standard Wafer-level Electromigration Accelerated Test) structure. The test results have been found to be well correlated with long-term low current electromigration tests. A sensitive differential test may be implemented that determines the effects of topography features. The inventive test technique can be performed on every wafer lot, or even every wafer, so that adjustments to the wafer fabrication process can be rapidly implemented. <IMAGE> |
申请公布号 |
HK188595(A) |
申请公布日期 |
1995.12.22 |
申请号 |
HK19950001885 |
申请日期 |
1995.12.14 |
申请人 |
AT&T CORP |
发明人 |
DANIEL PATRICK CHESIRE;ANTHONY STEPHEN OATES |
分类号 |
H01L21/66;G01R31/26;H01L23/544 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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