| 摘要 |
PURPOSE:To provide a method for easily forming p-i-n junction without going through a diffusion process. CONSTITUTION:By performing etching to GaAs substrate 10, a first surface 16 where N of face orientation (N11) satisfies 0<=N<=3, a second surface 18 which contacts the first surface 16 and where N of the face orientation (N11) satisfies N 4, and a third surface 20 which contacts the second surface 18 and where N of the face orientation (N11) satisfies 5<=N are formed. The first to third surfaces are bent at the boundary line where each surface contacts and overlap one another. Then, Si-doped GaAs layer or Al GaAs layer 24 where Si as a bi-polar impurity is grown on the first to third surfaces by the MBE method and p-type layer 26, a low-carrier concentration layer (i-type layer) 28, and an n-type layer 30 are simultaneously formed on the first layer 16, the second layer 18, and the third layer 20, respectively. |
