| 摘要 |
PURPOSE:To obtain a solid growth method of forming a polycrystalline silicon thin film out of amorphous silicon, wherein crystal grains are enhanced in diameter, and occurring nucleuses are lessened in number at an initial stage. CONSTITUTION:When an amorphous silicon layer 5 formed on a substrate 4 is turned into a polycrystalline silicon thin film by annealing, a part of an annealing process is carried out in plasma 6. |
