FIELD EFFECT TRANSISTOR,申请号JP19940123520-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH07335770(A)	申请公布日期	1995.12.22
申请号	JP19940123520	申请日期	1994.06.06
申请人	MATSUSHITA ELECTRIC IND CO LTD	发明人	JINNO ISAKU;HAYASHI SHIGENORI;TAKAYAMA RYOICHI
分类号	H01L21/8247;H01L21/8246;H01L27/105;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/824	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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