| 摘要 |
The semiconductor device is mfd. by (a) forming a buried layer, an epitaxial layer, a trench and a first oxide film on the semiconductor substrate, (b) ion implanting the photoresist pattern by masking to define a sink region, (c) forming a first nitride film and a sink junction region, (d) forming a contact window on the first nitride and oxide films to define an emitter region, (e) forming the emitter region and a first and a second base regions, (f) forming a first plate of the capacitor and an emitter polycrystal silicon pattern, (g) dipping a second nitride film to the whole surface, (h) forming a second plate of the capacitor and a second oxide film, and (i) forming a contact window on the second nitride and oxide films and a metal electrode.
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