| 摘要 |
<p>A memory system having memory cells (200) for storing one of a plurality of threshold levels to store more than a single bit per cells is disclosed. The memory system contains a switch control (205) to permit selection of an operating mode including a multilevel cell mode and a standard cell mode. The memory system further includes a reading circuit to read a single bit per cell when operating in the standard cell mode, and to read multiple bits of data per memory cell when operating in the multilevel cell mode. A program circuit programs a single bit of data per memory cell for adressed memory cells when operating in the standard cell mode, and programs multiple bits of data per memory cell for addressed memory cells when operating in the multilevel cell mode.</p> |
