Thyristor with insulated gate for gate turn off transistor, power switching device

摘要

The thyristor includes a base layer (3), three source zones (6,7,8), an emitter zone (9) and two gate electrodes (11,12). The source zones and the emitter zone or of the same conductivity type as the base layer, e.g. n-type, and each lie in a base zone (4) of opposite conductivity on one side of the base layer. A contact zone (5) contacts two of the source zones (7,8) and is of the same conductivity as the base zone. An emitter layer (1) is provided on the opposite side of the base layer and is of opposite conductivity to it. One gate electrode (11) on an insulating film (10) lies over the base zone between one source zone (6) and the base zone free region. The other gate electrode (12) is between both the emitter zone and one contact region source (8) and between the remaining two source zones (6,7). An auxiliary electrode (16) contacts the contact zone and its two neighbouring source zones. A cathode is in contact with the remaining source zone, the emitter zone and the base zone. An anode (13) is in contact with the emitter layer.