发明名称 METHOD AND APPARATUS FOR LOW TEMPERATURE DEPOSITION OF CVD AND PECVD FILMS
摘要 Low temperature deposition of CVD and PECVD films utilizes a gas-dispersing showerhead (36) position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing ring (50, 52) such a steady state flow of gas develop, between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate. The showerhead is biased with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder (60) is isolated from the showerhead such as by a quartz insulator ring (62) to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of quartz material. The RF showerhead utilizes small gasdispersing holes (54) to further prevent ignition of a plasma within the cylinder.
申请公布号 CA2191456(A1) 申请公布日期 1995.12.14
申请号 CA19942191456 申请日期 1994.11.29
申请人 发明人 FOSTER, ROBERT F.;HILLMAN, JOSEPH T.;ARORA, RIKHIT
分类号 C23C16/44;C23C16/455;C23C16/458;C23C16/50;C23C16/509;H01L21/205;H01L21/285;(IPC1-7):C23C16/50;C23C16/52 主分类号 C23C16/44
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