Integrierte Halbleiterschaltkreisstruktur und Verfahren zur Herstellung von dieser

摘要

A high voltage integrated circuit is formed from a first substrate (37) and a second substrate (38) bonded to the first substrate (37) at a bonding interface (39) by heating to approximately 1200 DEG C until the two substrates are atomically bonded together. The first substrate (37) is first provided with differently doped regions, including P+ and N+ regions having contacts, such as contact (40), attached to them, to form control circuitry (41). At the bonding interface (39) there is provided an insulating layer (42) of SiO2 to vertically isolate the control circuitry (41) from the high voltage portion of the circuit (48) which extends below the SiO2 layer (42). <IMAGE>