METHOD FOR FORMING NITROGEN-DOPED GROUP II-VI COMPOUND SEMICONDUCTOR FILM

摘要

When forming a group II-VI compound semiconductor film made of at least one of group II elements and at least one of group VI elements on a substrate, the substrate is exposed to a nitrogen plasma while charged particles contained in the plasma are removed by means of a charged particle removing means so as to dope the film with nitrogen. The activating rate and crystallinity of the film are improved.