| 摘要 |
<p>Titanium films (29) are nitrided at temperatures less than 650 °C, and preferably between 400 °C and 500 °C, by treating the titanium film (29) with a plasma formed from a nitriding gas at elevated temperatures. The plasma is created by subjecting the nitriding gas to RF energy, preferably an electrode (36) having a frequency of 13.56 MHz or less. The reaction temperature can be reduced by lowering the plasma frequency to less than 500 KHz. This provides for nitridization at temperatures of 480 °C and lower.</p> |
