| 摘要 |
<p>The fabrication of a resistor structure is described. A resistive region (103) is formed over the top of a substrate (106). Trenches are formed from the top side of the substrate in scribe line regions where the wafer is to be separated to form resistor modules. Contact layers (141, 142) are formed over the top side of the substrate (106) and are electrically coupled to each end of the resistive region (103), respectively. The contact layers (141, 142) are also formed over the sidewalls of the trenches. The wafer is separated through the trenches, creating resistor modules having sidewall contact regions.</p> |
