Verfahren zur Herstellung von Polysiliziumdünnfilmtransistoren mit niedrigem Kriechverlust.,申请号DE1991614418-传众专利搜索

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发明名称	Verfahren zur Herstellung von Polysiliziumdünnfilmtransistoren mit niedrigem Kriechverlust.
摘要
申请公布号	DE69114418(D1)	申请公布日期	1995.12.14
申请号	DE1991614418	申请日期	1991.08.28
申请人	PHILIPS ELECTRONICS N.V., EINDHOVEN, NL	发明人	MITRA, UDAYANATH, NL-5656 AA EINDHOVEN, NL;VENKATESAN, MAHALINGAM, NL-5656 AA EINDHOVEN, NL
分类号	H01L29/78;H01L21/322;H01L21/336;H01L29/786;(IPC1-7):H01L29/786	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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