发明名称 Improved composite polishing pad for semiconductor process
摘要 <p>An improved composite polishing pad includes a first layer of elastic material, a second, stiff layer and a third layer optimized for slurry transport. This third layer is the layer against which the wafer makes contact during the polishing process. The second layer is segmented into individual sections physically isolated from one another in the lateral dimension. Each segmented section is resilient across its width yet cushioned by the first layer in the vertical direction. The physical isolation of each section combined with the cushioning of the first layer of material create a sort of "bedspring" effect which enables the pad to conform to longitudinal gradations across the wafer.</p>
申请公布号 IE66126(B1) 申请公布日期 1995.12.13
申请号 IE19920001103 申请日期 1992.04.07
申请人 INTEL CORPORATION 发明人 BREIVOGEL JOSEPH R;LOUKE SAM F;OLIVER MICHAEL R;YAU LEO D
分类号 B24B37/22;B24B37/26;H01L21/304;(IPC1-7):B24B37/04 主分类号 B24B37/22
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