| 摘要 |
A method for forming an upper metal wiring which is in contact with an under conductive layer in a highly integrated semiconductor device. The method includes the steps of forming a metal wiring layer on a lower insulating film, forming a contact hole in the insulating film to expose an under conductive layer, and growing a metal layer in the contact hole to fill up the contact hole, so that the metal wiring layer can be in contact with the lower conductive layer. |
