发明名称 |
Attenuated phase shift mask and process for fabricating such a mask |
摘要 |
<p>An attenuated phase shift mask comprises a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift, formed on said first layer. For a phase shift of 180 DEG and i-line wavelength (365 nm), where chromium is used as the first layer, then a thickness within the range of about 25 to 75 nm is employed; where silicon dioxide is used as the second layer, then a thickness of about 400 to 450 nm is employed. While the oxide may be dry-etched, an isotropic wet etch provides superior aerial images.</p> |
申请公布号 |
EP0686876(A2) |
申请公布日期 |
1995.12.13 |
申请号 |
EP19950302403 |
申请日期 |
1995.04.11 |
申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
KRIVOKAPIC, ZORAN;SPENCE, CHRISTOPHER A. |
分类号 |
G03F1/32;H01L21/027;(IPC1-7):G03F1/00 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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