| 摘要 |
PURPOSE:To improve operating efficiency and to form a thin film free from sticking of dust by indirectly heating a wafer to be treated which is held on a substrate holder with a heating part oppositing thereto through a space and blowing reactive gas to the underside from a gas port part. CONSTITUTION:A thin film is formed on the surface of a wafer 5 by a vapor- phase growing method in a reaction chamber 1. In the above-mentioned heat treatment device, the wafer 5 to be treated is held on a substrate holder 6. This wafer 5 is indirectly heated with a heating part 7 having a heater 2 oppositely arranged to the upper part through a space. On the other hand, reactive gas is injected in a showerlike state from a gas port part 8 consisting of both a gas injection port 3 which is arranged in the lower part and has many pieces of small holes 31 and a gas exhaust part 81 and blown on the underside of the wafer 5. Further it is preferable that heat reflection plates 71, 72 are provided around the heating part 7 and furthermore a heat insulating wall of inert gas is formed on the outer periphery of the wafer 5. Thereby, holding and handling of the wafer are made easy and operating efficiency is improved and the thin film forming face is prevented from being stuck with dust. |
