Method of manufacturing solid state image sensing device

摘要

An aluminum film (10a) for covering an interlayer insulating film (9) is formed by sputtering, and is then subjected to a heat treatment at a temperature lower than its melting point to cause a reflow. Then, an opening (11a) is formed in the aluminum film, so that a light shielding film is formed in such a way as to cover the step portion with a uniform thickness. Making the light shielding film (10a) of a solid state image sensing device thinner permits the opening size of the light shielding film to increase, ensures the effective use of light to improve the sensitivity, and improves the working precision in forming the opening, thus suppressing a variation in the sensitivity of the individual pixels.