ISOLATION FILM OF SEMICONDUCTOR DEVICE, COATING FLUID FOR FORMING THE FILM, AND PROCESS FOR PRODUCING THE FILM

摘要

An insulation film of semiconductor devices, which has a good film quality and excellent burying characteristics and is capable of thick coating and leveling. An insulation film (6) comprising a silane compound of the general formula SiHx(CH3)yO2-(x+y)/2 (wherein 0 < x < 1 , 0 < y < 1 and x+y </= 1 ) is formed by coating a stepped semiconductor substrate (1) with a coating fluid for forming insulation films mainly comprising a solution of a polymer prepared by cohydrolyzing a trialkoxysilane of the general formula SiH(OR)3, a methyltrialkoxysilane of the general formula SiCH3(OR)3 and a tetraalkoxysilane of the general formula Si(OR)4, drying the coating, and curing the same by heating in an inert gas atmosphere.