| 摘要 |
PURPOSE:To realize a highly accurate measurement by providing an anode electrode receiving radiation on one major surface of a compound semiconductor sensitive to radiation and a cathode electrode on the other opposing major surface and then applying a potential between both electrodes and detecting the current thereby minimizing the drift. CONSTITUTION:A semiconductor detection element 1 comprises a cathode electrode 3 of Pt provided on one side of a CdTe semiconductor single crystal substrate 2, and an anode electrode 4 of In provided on the other side. The electrode 4 is irradiated from above with X-rays 6 emitted from an object and a constant bias voltage is applied from a bias power supply 8 between the electrodes 3, 4 through a digital ammeter 7. Since X-rays 6 enters from the electrode 4 side, drift of the average current of current pulse caused by the radiation close is suppressed and high radiation dose can be measured with high accuracy.
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