发明名称 Cache memory utilizing pseudo static four transistor memory cell
摘要 A four transistor memory cell having a pair of cross coupled transistors and a pair of pass gates is disclosed. The four transistor memory cell is refreshed by charge transfer between the bit lines the internal nodes during bit line precharge.
申请公布号 US5475633(A) 申请公布日期 1995.12.12
申请号 US19940252320 申请日期 1994.06.01
申请人 INTEL CORPORATION 发明人 MEHALEL, MOTY
分类号 G11C11/403;G11C11/412;G11C11/56;G11C15/04;(IPC1-7):G11C11/34;G11C7/00 主分类号 G11C11/403
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