| 摘要 |
PURPOSE: To increase an effective area of a storage electrode by growing a dielectric film along the surfaces of first, second storage electrode polycrystalline silicon patterns and a third storage electrode polycrystalline silicon spacer, and then depositing and patterning polycrystalline silicon to form a plate electrode. CONSTITUTION: In an etching process using a sacrifice oxide film spacer 13 as an obstacle a first storage electrode polycrystalline silicon 9 is selectively removed to form a first storage electrode polycrystalline silicon pattern 9. Further, a third storage electrode polycrystalline silicon spacer 14 is formed on an outside wall of the sacrifice oxide film spacer 13 outside a second storage electrode polysilicon pattern 11. A dielectric film 15 is grown along the surfaces of the first and second storage electrode polycrystalline silicons 9, 11, the third storage electrode polysilicon spacer 14, and the first storage electrode polycrystalline silicon pattern 9, and then doped polycrystalline silicon is deposited, which is in turn patterned to form a plate electrode 16. |
