| 摘要 |
PURPOSE: To continuously deposit an intrinsic amorphous silicon layer and a doped amorphous silicon layer on a substrate, by successively depositing on the substrate an insulating material layer with sufficient thickness, an intrinsic silicon layer having a first predetermined thickness, and a doped silicon layer having second predetermined thickness. CONSTITUTION: Prior to deposition of an intrinsic amorphous silicon layer 54, the intrinsic amorphous silicon layer 54 and a doped amorphous silicon layer 56 are continuously deposited on a substrate 38 in the same CVD chamber 12 which a first deposition operation for depositing a dielectric insulating material layer 52. The insulating material deposited on a TFT substrate 50 is needed to have a minimum thickness of a residual insulating material enough to substantially cover all of a residual dopant remaining on a chamber wall surface 32, with a deposition process onto the substrate 38 performed before the deposition of the insulating material is covered on the chamber surface. This is valid to provide a clean environment for the next deposition process in the same CVD chamber 12.
|
