SEMICONDUCTOR DEVICE OF II-VI COMPOUND SEMICONDUCTOR AND FORMING METHOD OF II-VI COMPOUND SEMICONDUCTOR LAYER

摘要

PURPOSE:To improve electric and optical characteristics of a semiconductor device, by preventing the deterioration of crystallinity of II-VI compound semiconductor layer which is to be caused by defect due to lattice unconformity between the substratum of III-V compound semiconductor and the growth layer of II-VI compound semiconductor. CONSTITUTION:One or more sets of super lattice 13 composed of a zinc cadmium selenium thin film 31 and a zinc sulfur selenium thin film 32 are formed between a semiconductor substratum 11 composed of III-V compound semiconductor and a II-VI compound semiconductor layer 14. A buffer layer 12 wherein the same kind of crystal as the semiconductor substratum 11 is grown is formed between the semiconductor substratum 11 and the super lattice 13. The similar super lattice (which is not shown in figure) is formed in the II-VI compound semiconductor layer 14.