THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PURPOSE:To make it possible to suppress lowly an edge conduction having relations with the off-state current for a thin film transistor and the deterioration of the characteristics of the transistor. CONSTITUTION:A high-concentration doping required to source and drain regions is not performed to a semiconductor thin film 2 in the vicinities X of the intersection part of a pattern edge of a gate electrode 4 with a pattern edge of the film 2. By this constitution of a thin film transistor, an edge conduction is slowly suppressed and moreover, the fluctuations of the characteristics of the transistor is reduced also to a stress due to application of a high voltage. This is thought the reason that a current path to contribute to the edge conduction results in passing through the parts of the vicinities X of the intersection part and a resistance component is applied to the edge conduction compared with the case of the conventional constitution of the transistor.