| 摘要 |
<p>PURPOSE:To form a microcathode of a uniform form and height by forming a shock absorbing layer on a conductive layer in pattern work, and forming cathode holes in the conductive layer and an insulation layer. CONSTITUTION:A lower conductive layer 31, an insulation layer 32, and an upper conductive layer 35 comprising a polysilicone film 34 and a tungsten silicide film 36 are formed in order on a substrate 30. On this layer 35, a shock absorbing layer 37 comprising polysilicone film is formed. Next, a resist film 38 is formed on the layer 37, an aperture part 40 is formed by photolithography, and cathode holes 44 are formed by plasma etching. The layer 37 is then eliminated, a removable layer 46 is formed on the film 36, and a cathode forming layer 48 of molybdenum or the like is deposited on the layer 46 by electron beam deposition. Cathodes 50 can thus be formed in a uniform form.</p> |
