| 摘要 |
PURPOSE:To provide a conductive laminate having excellent etching resistance and alkaline resistance. CONSTITUTION:This conductive laminate has a layer constitution formed by successively laminating a metallic thin film layer having a film thickness of 10 to 50 angstrom and a second amorphous multiple oxide layer having a film thickness of 100 to 1000 angstrom on a first amorphous multiple oxide layer having a film thickness of 100 to 1000 angstrom. Both of the first amorphous multiple oxide layer and the second amorphous multiple oxide layer consist of the multiple oxides consisting of oxides of one kind or plural kinds of metals selected from in oxides and a group consisting of Sn, Ga and Zn and of which the ratio of the In occupying at the entire metal element is 20 to 80mol%. The metallic thin film layers consist of one plural kinds selected from a group consisting of Au, Ag, Cu, Pt and Al. The conductive transparent substrate has the transparent substrate and the above conductive laminate formed directly or via an undercoating layer on the prescribed surface of the transparent substrate. |
