| 摘要 |
<p>PURPOSE:To improve the turn-off characteristics of a thin film transistor by a method wherein after the thin film field-effect transistor is formed, ultraviolet ray is irradiated on the thin film fieldeffect transistor. CONSTITUTION:A thin film transistor and a transparent pixel electrode ITO 1 are formed on the side of a lower transparent glass substrate SUB 1 on the basis of a liquid crystal layer LC and a color filter FLI and a light-shielding use black matrix pattern BM are formed on the side of an upper transparent glass substrate SUB 2. Silicon oxide films SIO are respectively provided on both surfaces of the substrates SUB 1 and SUB 2. Moreover, the light-shielding film BM, the color filter FIL, a protective film PSV 2, a common transparent pixel electrode ITO 2 and an upper orientation film OR 12 are laminated in order on the inside surface of the substrate SUB 2 and ultraviolet ray is irradiated on the interface between a semiconductor layer AS and a protective film PSV 1. Thereby, the turn-off characteristics of a thin film field-effect transistor can be improved.</p> |
