| 摘要 |
PURPOSE: To provide an integrated transistor and a resonant tunneling diode in which for realizing various circuit functions by assembling them internal mutual interconnection is ensured and an occupation surface area of a substrate is reduced. CONSTITUTION: A transistor includes a substrate 1, a buffer layer on the substrate 10, and a channel layer 14 on the buffer layer 12, and a resonant tunneling diode 6 (RTD) includes a first contact layer 18, a first tunneling barrier layer 20 on the first contact layer 18, a quantum well 22 on the first tunneling barrier layer 20, a second tunneling barrier layer 24 on the quantum well 22, and a second contact layer 26 on the second tunneling barrier layer 24. The transistor is desired to be a field effect transistor(FET) including a mesa structure. The RTD 6 is desired to the provided on a side wall of the mesa structure. The device may further include an insulating layer 16 on the channel layer 14, and be a III-V group material. The device may include many RTDs 6.
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