GROWTH METHOD FOR II-VI COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To provide a growth method for a p-type II-IV compound semiconductor whose acceptor concentration is enough high. CONSTITUTION:When a p-type II-VI compound semiconductor such as p-type ZnSe is formed by a metal organic chemical vapor deposition or a molecular beam epitaxy using raw gas material, organic compound such as diisopropyl amine wherein at least one nitrogen atom is contained and at least two groups whose molar weight is at least 12, properly larger than 36 are bonded to the nitrogen atom is used as p-type dopant.