发明名称 |
Opto-electronic integrated circuit |
摘要 |
An opto-electronic integrated circuit is arranged to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.
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申请公布号 |
US5475256(A) |
申请公布日期 |
1995.12.12 |
申请号 |
US19940235947 |
申请日期 |
1994.05.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SAWADA, SOSAKU;SASAKI, GORO;YANO, HIROSHI |
分类号 |
H01L27/14;H01L27/144;H01L31/10;H03F3/08;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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