发明名称 |
Process and apparatus for generating precursor gases used in the manufacture of semiconductor devices |
摘要 |
Many devices, such as those based on III-V semiconductor materials, are produced utilizing gases such as arsine that require careful handling of compressed gas cylinders. This care has engendered a search for alternate approaches. It has been found that the use of electrochemically generated gases such as arsine yields an efficient, pure source of such gases without necessitating the storage of large gas quantities. Thus, a device fabrication procedure including in situ electrochemical generation of gases such as arsine is particularly useful.
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申请公布号 |
US5474659(A) |
申请公布日期 |
1995.12.12 |
申请号 |
US19940292346 |
申请日期 |
1994.08.17 |
申请人 |
AT&T CORP. |
发明人 |
CADET, GARDY;MITCHELL, JAMES W.;VALDES, JORGE L. |
分类号 |
C23C16/448;C25B1/00;(IPC1-7):C25B1/00 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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