发明名称 SEMICONDUCTOR BOOSTER CIRCUIT
摘要 <p>PURPOSE:To prevent the booster from deteriorating due to the substrate effect and to realize driving with a low power supply voltage. CONSTITUTION:The substrate parts of transistors Qa,...,Q9 are isolated electrically from each other and connected with the source terminals N3,...N12 of respective transistors Q1,...,Q9 thus fixing respective substrate parts at the source potential of the transistors Q1,...,Q9. The transistors Q1,...,Q9 are driven with a clock signal phi2A or phi2B having an amplitude larger than that of a power supply voltage Vdd.</p>
申请公布号 JPH07327357(A) 申请公布日期 1995.12.12
申请号 JP19940141113 申请日期 1994.05.31
申请人 NIPPON STEEL CORP 发明人 SAWADA KIKUZO
分类号 G11C17/00;G11C16/06;H01L21/822;H01L27/04;H02M3/07;(IPC1-7):H02M3/07 主分类号 G11C17/00
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