发明名称 |
Method and apparatus for dry etching |
摘要 |
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
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申请公布号 |
US5474650(A) |
申请公布日期 |
1995.12.12 |
申请号 |
US19940301388 |
申请日期 |
1994.09.07 |
申请人 |
HITACHI, LTD. |
发明人 |
KUMIHASHI, TAKAO;TSUJIMOTO, KAZUNORI;TACHI, SHINICHI |
分类号 |
H01J37/32;H01L21/02;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):H01L21/306;B44C1/22;C03C15/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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