| 发明名称 |
Method and apparatus for high-flatness etching of wafer |
| 摘要 |
A method and an apparatus for high-flatness etching a semiconductor single crystal wafer wherein said wafer is so rotated in a flow of an ethchant radially spreading in a plane that the main surface of said wafer may move parallelly with the flow of said etchant.
|
| 申请公布号 |
US5474644(A) |
申请公布日期 |
1995.12.12 |
| 申请号 |
US19940278132 |
申请日期 |
1994.07.21 |
| 申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KATO, TADAHIRO;KUDO, HIDEO |
| 分类号 |
H01L21/306;(IPC1-7):B05C5/00 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
