发明名称 BATCH ERASING TYPE NON-VOLATILE STORAGE DEVICE AND ITS ERASING METHOD
摘要 <p>PURPOSE:To perform a highly accurate erasing operation in a short time by providing an automatic control circuit performing pre-writing, high speed erasing, write-in, low speed erasing successively. CONSTITUTION:An automatic control circuit 15 to which a write-in control signal or an erasing control signal is inputted through a command decoder 14, performs sequence control operation required for erasing operation or write-in operation. That is, an erasing mode is started, pre-writing and pre- verifying are performed. And erasing operation is performed en bloc and at a high speed with a comparatively large erasing reference voltage, and erasing verifying is performed. Further, the batch erasing is performed in a comparatively long time with a comparatively low erasing reference voltage, and erasing verifying is performed. Thereby, threshold voltage by which an erasing state can be obtained in a short time and highly accurately can be set.</p>
申请公布号 JPH07320488(A) 申请公布日期 1995.12.08
申请号 JP19940129691 申请日期 1994.05.19
申请人 HITACHI LTD;HITACHI TOBU SEMICONDUCTOR LTD;HITACHI VLSI ENG CORP 发明人 TAKAHASHI MASATO;ODAGIRI MICHIKO;FURUNO TAKESHI;FURUSAWA KAZUNORI;WADA MASASHI
分类号 G11C17/00;G11C16/02;G11C16/16;G11C16/34;(IPC1-7):G11C16/06 主分类号 G11C17/00
代理机构 代理人
主权项
地址