| 摘要 |
PURPOSE:To provide a new developing method for a semiconductor element which improves the dimensional uniformity of a photoresist pattern covering a semiconductor wafer. CONSTITUTION:The temperature of photoresist solution 13, 13' laid on a layer like an oxide film or a metal film which cover the surface of a semiconductor wafer 11 is set as follows. The temperature of the solution of the peripheral part 21 of the semiconductor wafer 11 is higher than that of the part corresponding with the center of the semiconductor wafer 11. Thereby the dimensional uniformity of the photoresist pattern is improved, and the large aperture of the semiconductor wafer 11 is realized. |
