发明名称 THIN-FILM TRANSISTOR ARRAY FOR DISPLAY ELEMENT
摘要 <p>PURPOSE:To lower the resistance of wirings formed on a thin-film transistor (TFT) array for display elements. CONSTITUTION:Pixel electrodes and TFTs 2 are integrated and formed on the TFT array for display elements and the wirings 6, 8, 9 connecting the individual TFTs 2 are patterned and formed thereon. At least the gate wirings 6 of these wirings 6, 8, 9 have a laminated structure formed by superposing conductor layers 11 and metallic layers 13 of a Q resistance value smaller than that of the conductor layers. The conductor layers 11 consist of, for example, DOPOS and the metallic layers 12 of extremely thin aluminum. The conductor layers 11 have a sufficient film thickness in order to assure physical continuity as fine patterns. The metallic layers 12 contribute to a decease of the surface resistance value of the wirings 6 and are thinly superposed to the extent of not generating surface variation, such as hillock.</p>
申请公布号 JPH07318978(A) 申请公布日期 1995.12.08
申请号 JP19940131246 申请日期 1994.05.20
申请人 SONY CORP 发明人 IKEDA HIROYUKI
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/1343
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