| 摘要 |
PURPOSE:To provide a memory cell which enable the materialization of large- capacity or high-density DRAM by providing structure suitable for micronization. CONSTITUTION:In the memory cell of a DRAM composed of a transfer transistor and a capacitor, the transfer transistor is made in the silicon film layer 6 provided on the insulating film on the main face of a semiconductor substrate, and the capacitor is made in the groove extended from the main face of the semiconductor substrate 1 to its inside. Here, the capacitor is made of a dielectric film 3 provided at the inwall of the groove, one electrode provided on this dielectric film 3, and the impurity diffusion layer 2 provided at the inwall of the groove and the main face of the semiconductor substrate 1, and one electrode provided on the dielectric film 3 is electrically connected to the diffusion layer to serve as the source or drain region of the transfer transistor, and the impurity diffusion layer is connected to the wiring at the fixed potential. |
