| 摘要 |
PURPOSE:To obtain any stable electric field distribution within an i-type layer by forming one or more Fermi level adjusting layers in the i-type layer to adjust the position of Fermi levels. CONSTITUTION:A translucent electrode 2, a p-type layer 3 composed of p-type amorphous semiconductor, an i-type layer 4 composed of i-type amorphous semiconductor, a n-type layer 5 composed of n-type amorphous semiconductor and a back electrode 6, are formed on a translucent substrate 1 in this order. Fermi level adjusting layers 4a, 4b containing p-type impurities and those 4c, 4d containing n-type impurities, are formed in the i-type layer 4. Separated from each other, the Fermi level adjusting layers 4a, 4b are placed in the region extending from the center of the i-type layer 4 to the boundary between it and the p-type layer 3. Separated from each other, the Fermi level adjusting layers 4c, 4d are placed in the region extending from the center of the i-type layer 4 to the boundary between it and the n-type layer 5. This unifies and stabilizes the electric field distribution in the i-type layer. |
