| 摘要 |
<p>PURPOSE:To materialize the matching with characteristic impedance in high frequency area and structure where potential is taken from the rear of a semiconductor substrate, including shield effect. CONSTITUTION:A first conductive metallic layer 11 is made at a board mount having a recess, and a lead whose tip is opposed to the semiconductor substrate and the connection electrode of a semiconductor substrate are connected with each other by a bonding wire. A cap 20 has a recess 23, and it is equipped with a recess 21 for covering, for protection, the semiconductor substrate, the bonding wire, and the lead, at the center of the main face. A second conductive metallic layer 22 is made at this cap, and a current lead path 25 is electrically connected. The semiconductor substrate in the substrate mount and also the electric connection between metallic layers is made by setting a projection 24 in the recess 12 of the substrate mount. Moreover, the matching of characteristic impedance is made by connecting the lead, as a power source, being led in the corner of the substrate mount to the second conductive metallic layer.</p> |
